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MOLECULAR-DYNAMICS-NEWS  April 2013

MOLECULAR-DYNAMICS-NEWS April 2013

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Subject:

Postdoctoral position in Bordeaux: Chemical, structural and morphological characterization of laser printed organic thin film transistors

From:

Bonhommeau Sébastien <[log in to unmask]>

Reply-To:

Bonhommeau Sébastien <[log in to unmask]>

Date:

Fri, 12 Apr 2013 09:56:39 +0100

Content-Type:

text/plain

Parts/Attachments:

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text/plain (37 lines)

For many applications within the microelectronics industry, the challenge is no longer
the size reduction but the flexibly of materials and low production costs. In this context, a
laser printing technique called LIFT (Laser-Induced Forward Transfer) has been developed in
the frame of a preceding project. It allowed the printing of organic thin film transistors
(OTFT) on various substrates. However, the performances of such OTFTs remained one to
two orders of magnitude lower than their counterparts prepared by vacuum evaporation using
masks to achieve the spatial resolution. A careful inspection of OTFTs is required hence in
order to identify origins (quality of interfaces involved in the charges injection and transport
notably,...) of these reduced performances and avoid them.

The successful applicant will participate to the shared effort to characterize monolayer
and multilayer thin films produced by LIFT. Combined Raman/AFM (Atomic Force
Microscopy), Raman/SHG(Second Harmonic Generation)/UV-vis microscopy techniques
and spectroscopic ellipsometry will be used to obtain morphological, chemical, structural and
optical information about the layers. The topography and chemical/structural features of
monolayers could be determined by means of the coupled AFM/Raman technique. Raman
mapping of multilayer samples should additionally provide valuable information on the
semiconductor/insulator interface such as its homogeneity and/or delamination. The SHGbased
technique will probe structural/disorder modifications induced by the LIFT process
using non-linear optical markers dispersed at the interfaces and correlate them to
chemical/structural features deduced from Raman and absorption techniques. Spectroscopic
ellipsometry in reflection mode will allow the dielectric contrast of the top interface
(dielectric homogeneity, thickness of the layers) to be imaged.

The host institution will be the"Institut des Sciences Moléculaires", one of the major laboratory in chemistry in Bordeaux. It is located on the campus of the "Université Bordeaux 1". It gathers 10 research groups working on various scientific fields, such as the synthesis and physico-chemical characterization of organic and inorganic nanostructures, bioactive molecules, materials for photonics and sensing, astrochemistry, computational chemistry and electrochemistry. The host group will be the "Groupe de Spectroscopie Moléculaire" which has long-acquired expertise in vibrational (infrared and Raman) microscopy and supervises the platform "Vibrational spectroscopy and imaging" in Bordeaux. All the equipments required to achieve the proposed project (atomic force and Raman microscopes, UV-vis spectrometers, ...) are already available in the group. 

The strongly motivated applicants must have a PhD degree in chemistry, physical-chemistry,
physics or related disciplines. Knowledge in linear and non-linear optical
microscopies will be highly appreciated. To apply for this postdoctoral position, please send a CV, a motivation letter and the name of one referee to the following email address
[log in to unmask] This postdoctoral position will be funded by the French
research agency ANR (ILTO project – ANR Blanc 2011). It will be available from the 1st of
September 2013 for a 1-year period (not renewable). The gross salary should be about 2400
euros/month corresponding to a net salary of about 2000 euros/month.

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